Quad Mosfet



  1. Ald1106
  2. Ald1105 Datasheet
  3. Ald1106 Datasheet

FDMQ8403 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Vishay is one of the world's foremost manufacturers of power MOSFETs. The Vishay Siliconix MOSFET product line includes a diverse range of advanced technologies in more than 30 package types, from the chipscale MICRO FOOT® and thermally advanced PowerPAK® families to the classic “TO” transistor outline. Parameter Symbol Single Total Quad Unit Drain-Source Voltage VDS 30 VQ1001J 30 V Gate-Source Voltage VQ1001P VGS 20 TA= 25 C 0.83 Continuous Drain Current (TJ = 150 C) TA= 100 C ID 0.53 A Pulsed Drain Currenta IDM 3 TA= 25 C 1.3 2 Power Dissipation (Single) TA= 100 C PD 0.52 0.8 W Thermal Resistance, Junction-to-Ambient (Single) RthJA 96 62.5 C/W.

Ald1106

Quad

Наименование прибора: FDMQ8403

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 17 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 6 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.11 Ohm

Тип корпуса: MLP4.5X5 Site plan software for mac.

FDMQ8403 Datasheet (PDF)

Quad Mosfet

0.1. fdmq8403.pdf Size:266K _fairchild_semi

July 2012FDMQ8403GreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 100 V, 6 A, 110 mFeatures General DescriptionThis quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 110 m at VGS = 10 V, ID = 3 Apower dissipation over diode bridge. Max rDS(on) = 175 m at VGS = 6 V, ID = 2.4 A Substantial efficiency benefit in PD

9.1. fdmq86530l.pdf Size:220K _fairchild_semi

April 2013FDMQ86530LGreenBridgeTM Series of High-Efficiency Bridge RectifiersN-Channel PowerTrench MOSFET 60 V, 8 A, 17.5 mFeatures General DescriptionThis Quad MOSFET solution provides ten-fold improvement in Max rDS(on) = 17.5 m at VGS = 10 V, ID = 8 Apower dissipation over diode bridge. Max rDS(on) = 23 m at VGS = 6 V, ID = 7 A Max rDS(on) = 25 m at VGS = 4.5

Quad Mosfet

9.2. fdmq8203.pdf Size:372K _fairchild_semi

December 2011FDMQ8203GreenBridgeTM Series of High-Efficiency Bridge RectifiersDual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 m P-Channel: -80 V, -6 A, 190 mFeatures General DescriptionQ1/Q4: N-ChannelThis quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 m at VGS = 10 V, ID = 3

Другие MOSFET.. FQU2N60C, FDMC8030, FQU2N90TU_AM002, FQU3N50C, FQU4N50TU_WS, FQU5N40, FDMC7582, FQU5N60C, 2N5484, FQU5P20, FQU8P10, FQU9N25, HUF75542P3, HUF75631S3S, FDB86135, HUF75639S3, FDD86252.



Ald1105 Datasheet


Список транзисторов

Обновления

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02Mosfet


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Quad Hermetic MOSFETs

IR offers a comprehensive portfolio of quad channel power block hermetic MOSFETs for harsh environments.

Newest Parts

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Quality Documents

Quality Conformance Testing

Unlike standard commercial products, HiRel products must be submitted to various levels of quality conformance testing to ensure that the products are capable of performing to specifications in the often harsh environments of military and space applications. Both the United States and European community have each developed specifications that detail the sequence of quality conformance testing.

In the United States, the Defense Logistics Agency (DLA) is the controlling agency and has issued specifications that govern the quality conformance testing sequence performed on semiconductor devices and hybrid modules, namely MIL-PRF-19500/MIL-STD-750, MIL-PRF-38534/MIL-STD-883 and MIL-PRF-38535/MIL-STD-883.

MIL-PRF-19500/MIL-STD-750 are the controlling specifications for discrete semiconductors such as diodes and power MOSFETs. MIL-PRF-19500 directs discrete semiconductors to be manufactured to either JAN, JANTX, JANTXV, or JANS levels (Note: the JAN level is not allowed for MOSFETs).

International Rectifier HiRel Products Group manufactures and tests hermetic products to one of three distinct quality conformance levels: (1) commercial hermetic, (2) source control drawing (SCD), or (3) MIL-PRF-38534, MIL-PRF-38535 qualified.

Screening and Quality Conformance Inspection Requirements

QPL Listing - Discretes

Glossary

Class H: Class H is the standard military quality level provided in MIL-PRF-38534, General Specification for Hybrid Microcircuits. It is intended for space applications.

Level B: Class level B defines the screening requirements for high reliability military applications as specified in MIL-STD-883 and is intended for use in class H products.

Level S: Class level S defines the screening requirements for high reliability space applications as specified in MIL-STD-883 and is intended for use in class K products.

Jat mac. JAN: JAN (Joint Army Navy) is the prefix assigned by the DLA to designate devices on the DLA qualified parts list.

JANTX: Military screening level as specified in MIL-PRF-19500 for a DLA qualified device.

JANTXV: Military with visual inspection screening level as specified in MIL-PRF-19500 for a DLA qualified device.

JANS: Space level screening as specified in MIL-PRF-19500 for a DLA qualified device.

Ald1106 Datasheet

Standard Hermetic MOSFETs

Discrete QPL Products